PL32001升压DC-DC转换器

Powlicon

宝砾微电子

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI PTB32001X is Designed for Common Base General purpose amplifier Applications up to 4.2 GHz. FEATURES INCLUDE: • Diffused Emitter Ballasting Resistor • Hermetic Flange Package • Gold Metelization

文件：18.57 Kbytes 页数：1 Pages

ASI

NPN microwave power transistors

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides

文件：66.24 Kbytes 页数：12 Pages

PHI

飞利浦

Advanced 16-Bit SoC with u nSP 2.0

文件：903.58 Kbytes 页数：21 Pages

GENERALPLUS

凌通科技

Advanced 16-Bit SoC with u nSP 2.0

文件：903.58 Kbytes 页数：21 Pages

GENERALPLUS

凌通科技

Low Cost Semi-Precision Power Wirewound Resistor

文件：218.82 Kbytes 页数：3 Pages

IRCTT