20V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-4.5V, ID@-5.5A

文件：466.65 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：4423；Package：DFN3333-8L；20V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-4.5V, ID@-5.5A

文件：466.65 Kbytes 页数：6 Pages

PANJIT

強茂

低压MOSFET (20 - 40V , RDS(ON) < 1Ω)

Panjit

強茂

Rad-hard 4.5 A dual inverting low-side MOSFET driver

Features • Wide operating voltage range: 4.65 V to 18 V • Parallel driving capability up to 9 A • Inverting configuration • Input 5 V logic level compatibility • 110 ns typical propagation delay • Matched propagation delays between the two channels (5 ns max.) • 20 mV maximum low level outp

文件：1.09245 Mbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

P-Channel 20-V (D-S) MOSFET

文件：41.64 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

P-Channel 20-V (D-S) MOSFET

文件：172.82 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司