500V N-Channel MOSFET

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PANJIT

強茂

HV MOSFET

Panjit

強茂

500V N-Channel MOSFET

文件：404.81 Kbytes 页数：8 Pages

PANJIT

強茂

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.2 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD ■ THROUGH-HOLE I2PAK (T

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STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

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STMICROELECTRONICS

意法半导体