PJD90N03

30V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@20A

PJD90N03_L2_00001

丝印：D90N03；Package：TO-252AA；30V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@20A

SK90N03

N-Channel30V(D-S)MOSFET,ESDProtected

STD90N03L

N-channel30V-0.005廓-80A-DPAK/IPAKSTripFET??IIIPowerMOSFET

Description ThisdeviceutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitableforthemostdemandingDC-DCconverterapplicationwherehighefficiencyistobeachieved. Generalfeatures ■RDS(on)*Qgindustry’sbenchmark ■Conductionlossesreduce

STD90N03L

N-Channel30-V(D-S)MOSFET

SUP90N03

N-Channel30-V(D-S)MOSFET

TF90N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET

●GeneralDescription TheTF90N03combinesadvancedtrench MOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealfor loadswitchandbatteryprotectionapplications. ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tominimizec

TTG90N03AT

30VN-ChannelTrenchMOSFET(Preliminary)

Features TrenchPowerTechnology LowRDS(ON) LowGateCharge OptimizedforFast-switchingApplications Applications SynchronousRectificationinDC/DCandAC/DCConverters IsolatedDC/DCConvertersinTelecomandIndustrial

TTG90N03AT

30VN-ChannelTrenchMOSFET(Preliminary)

Features TrenchPowerTechnology LowRDS(ON) LowGateCharge OptimizedforFast-switchingApplications Applications SynchronousRectificationinDC/DCandAC/DCConverters IsolatedDC/DCConvertersinTelecomandIndustrial

UT90N03

90A,30VN-CHANNEL(D-S)POWERMOSFET