PJD8N10

100V N-Channel MOSFET

SSG8N10

N-Channel100V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •ExtremelyLowQgdforSwitchingLosses •100RgTested •100AvalancheTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch

SSG8N10

N-ChEnhancementModePowerMOSFET

STD8N10L

N-Channel100V(D-S)MOSFET

STD8N10L

N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.25Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINPUTCAPACITANCE ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPEARTINGTEMPERATURE ■APPLICATION

STRH8N10

Rad-HardN-channel100V,6APowerMOSFET

TF8N10

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description The8N10SOT-89usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures VDSSRDS(ON)@10V(typ)ID 100V123mΩ8A ●HighdensitycelldesignforultralowRdson ●Fullycha

TF8N10G

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description The8N10GSOT-89usesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. GeneralFeatures VDSSRDS(ON)@10V(typ)ID 100V120mΩ8A ●HighdensitycelldesignforultralowRdson ●Fullych