30V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@16A

文件：425.93 Kbytes 页数：8 Pages

PANJIT

強茂

丝印：D55N03；Package：TO-252AA；30V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@16A

文件：425.93 Kbytes 页数：8 Pages

PANJIT

強茂

N-Channel Logic Level E nhancement Mode Field E ffect Transistor

FEATURES ● Super high dense cell design for extremely low RDS (ON). ● High power and current handling capability. ● TO-220 & T O-263 package.

文件：417.17 Kbytes 页数：5 Pages

Samhop

三合微科

N-Channel Logic Level E nhancement Mode Field E ffect Transistor

FEATURES ● Super high dense cell design for extremely low RDS (ON). ● High power and current handling capability. ● TO-220 & T O-263 package.

文件：417.17 Kbytes 页数：5 Pages

Samhop

三合微科

N-Channel Logic Level E nhancement Mode Field E ffect Transistor

文件：319.18 Kbytes 页数：5 Pages

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