30V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@10A

文件：450.85 Kbytes 页数：8 Pages

PANJIT

強茂

LV MOSFET

Panjit

強茂

丝印：D45N03；Package：TO-252AA；30V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@10A

文件：450.85 Kbytes 页数：8 Pages

PANJIT

強茂

45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

Description These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utili zation of silicon, resulting in outstanding performance. They were designed for use in applications such as switchi

文件：100.17 Kbytes 页数：7 Pages

Intersil

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.11 Kbytes 页数：2 Pages

ISC

无锡固电

Logic N-Channel MOSFET

文件：1.134 Mbytes 页数：7 Pages

semiWell

矽门微