60VP-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@-10V,ID@-7.5A

文件：745.37 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：D15P06A；Package：TO-252AA；60VP-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@-10V,ID@-7.5A

文件：745.37 Kbytes 页数：6 Pages

PANJIT

強茂

MOSFET

Panjit

強茂

1 Watt SIP7 Single Output for GaN Application

文件：572.88 Kbytes 页数：6 Pages

RECOM

15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs

These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：87.45 Kbytes 页数：8 Pages

Intersil

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -15A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：308.83 Kbytes 页数：2 Pages

ISC

无锡固电