零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
Low-DropoutLinearRegulatorControllerwithPGOODIndication GeneralDescription TheRT9024isalow-dropoutvoltageregulatorcontrollerwithaspecificPGOODindicatingscheme.ThepartcoulddriveanexternalN-MOSFETforvariousapplications.ThepartisoperatedwithVCCpowerrangingfrom3.8Vto13.5V.Withsuchatopology,itswithadvantagesoffl | RichTekRichtek Technology Corporation 台湾立绮立绮科技 | RichTek | ||
Low-DropoutLinearRegulatorControllerwithPGOODIndication GeneralDescription TheRT9024isalow-dropoutvoltageregulatorcontrollerwithaspecificPGOODindicatingscheme.ThepartcoulddriveanexternalN-MOSFETforvariousapplications.ThepartisoperatedwithVCCpowerrangingfrom3.8Vto13.5V.Withsuchatopology,itswithadvantagesoffl | RichTekRichtek Technology Corporation 台湾立绮立绮科技 | RichTek | ||
Low-DropoutLinearRegulatorControllerwithPGOODIndication GeneralDescription TheRT9024isalow-dropoutvoltageregulatorcontrollerwithaspecificPGOODindicatingscheme.ThepartcoulddriveanexternalN-MOSFETforvariousapplications.ThepartisoperatedwithVCCpowerrangingfrom3.8Vto13.5V.Withsuchatopology,itswithadvantagesoffl | RichTekRichtek Technology Corporation 台湾立绮立绮科技 | RichTek | ||
900MHztransmitmodulatorand1.3GHzfractional-Nsynthesizer DESCRIPTION Thisspecificationdefinestherequirementsforatransmittermodulatorandfractional–NsynthesizerICtobeusedincellulartelephoneswhichemploytheNorthAmericanDualModeCellularSystem(IS–136). FEATURES •Lowcurrentfrom3.75Vsupply •Lowphasenoise •Mainloopwith | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AdvancedPowerMOSFET FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-60V ●LowerRDS(ON):0.206Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AvalancheRuggedTechnology FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-60V ●LowerRDS(ON):0.206Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-channelEnhancementModePowerMOSFET Features VDS=-60V,ID=-20A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
AvalancheRuggedTechnology FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-60V ●LowerRDS(ON):0.206Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AdvancedPowerMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
AdvancedPowerMOSFET FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-60V ●LowerRDS(ON):0.206Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
RepetitiveAvalancheRated | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
PJ |
23+ |
SOT553 |
276724 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
PENGJUN |
2015+ |
SOT23-5 |
26998 |
专业代理升压型DC/DC转换IC,电压型号齐全,公司优 |
询价 | ||
PJ |
2018+ |
SOT25 |
393428 |
电源IC原装正品有优势 |
询价 | ||
PJ |
24+ |
SOT25 |
393428 |
电源IC原装正品有优势 |
询价 | ||
PJ |
2310+ |
SOT23-5 |
34960 |
优势代理渠道,原装现货,可全系列订货 |
询价 | ||
MEITEKCHIP |
23+ |
SOT23-6 |
15000 |
全新原装现货,价格优势 |
询价 | ||
PJ |
18+ |
SOT23-6 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
PJ |
22+ |
SOT26 |
25000 |
只有原装原装,支持BOM配单 |
询价 | ||
PJ |
23+ |
SOT26 |
50000 |
只做原装正品 |
询价 | ||
平晶微 |
1年内 |
SOT-23 |
50000 |
原厂FAE技术支持 共奕芯城一站式电子元器件采购平台支 |
询价 |
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