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RT9024

Low-DropoutLinearRegulatorControllerwithPGOODIndication

GeneralDescription TheRT9024isalow-dropoutvoltageregulatorcontrollerwithaspecificPGOODindicatingscheme.ThepartcoulddriveanexternalN-MOSFETforvariousapplications.ThepartisoperatedwithVCCpowerrangingfrom3.8Vto13.5V.Withsuchatopology,itswithadvantagesoffl

RichTekRichtek Technology Corporation

台湾立绮立绮科技

RT9024GE

Low-DropoutLinearRegulatorControllerwithPGOODIndication

GeneralDescription TheRT9024isalow-dropoutvoltageregulatorcontrollerwithaspecificPGOODindicatingscheme.ThepartcoulddriveanexternalN-MOSFETforvariousapplications.ThepartisoperatedwithVCCpowerrangingfrom3.8Vto13.5V.Withsuchatopology,itswithadvantagesoffl

RichTekRichtek Technology Corporation

台湾立绮立绮科技

RT9024PE

Low-DropoutLinearRegulatorControllerwithPGOODIndication

GeneralDescription TheRT9024isalow-dropoutvoltageregulatorcontrollerwithaspecificPGOODindicatingscheme.ThepartcoulddriveanexternalN-MOSFETforvariousapplications.ThepartisoperatedwithVCCpowerrangingfrom3.8Vto13.5V.Withsuchatopology,itswithadvantagesoffl

RichTekRichtek Technology Corporation

台湾立绮立绮科技

SA9024

900MHztransmitmodulatorand1.3GHzfractional-Nsynthesizer

DESCRIPTION Thisspecificationdefinestherequirementsforatransmittermodulatorandfractional–NsynthesizerICtobeusedincellulartelephoneswhichemploytheNorthAmericanDualModeCellularSystem(IS–136). FEATURES •Lowcurrentfrom3.75Vsupply •Lowphasenoise •Mainloopwith

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

SFR9024

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SFR9024

AdvancedPowerMOSFET

FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-60V ●LowerRDS(ON):0.206Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SFR9024TF

AvalancheRuggedTechnology

FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-60V ●LowerRDS(ON):0.206Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SFR9024TF

P-channelEnhancementModePowerMOSFET

Features VDS=-60V,ID=-20A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

SFRU9024

AvalancheRuggedTechnology

FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-60V ●LowerRDS(ON):0.206Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SFRU9024

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SFU9024

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SFU9024

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

SFU9024

AdvancedPowerMOSFET

FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-60V ●LowerRDS(ON):0.206Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SiHFD9024

RepetitiveAvalancheRated

VishayVishay Siliconix

威世科技威世科技半导体

SIHFR9024

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半导体

SIHFR9024

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFR9024

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

SiHFR9024

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SIHFR9024

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFR9024

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

供应商型号品牌批号封装库存备注价格
PJ
23+
SOT553
276724
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
PENGJUN
2015+
SOT23-5
26998
专业代理升压型DC/DC转换IC,电压型号齐全,公司优
询价
PJ
2018+
SOT25
393428
电源IC原装正品有优势
询价
PJ
24+
SOT25
393428
电源IC原装正品有优势
询价
PJ
2310+
SOT23-5
34960
优势代理渠道,原装现货,可全系列订货
询价
MEITEKCHIP
23+
SOT23-6
15000
全新原装现货,价格优势
询价
PJ
18+
SOT23-6
85600
保证进口原装可开17%增值税发票
询价
PJ
22+
SOT26
25000
只有原装原装,支持BOM配单
询价
PJ
23+
SOT26
50000
只做原装正品
询价
平晶微
1年内
SOT-23
50000
原厂FAE技术支持 共奕芯城一站式电子元器件采购平台支
询价
更多PJ9024MR供应商 更新时间2024-10-31 17:04:00