30V N-Channel Enhancement Mode MOSFET - ESD Protected

文件：209.86 Kbytes 页数：5 Pages

PANJIT

強茂

30V N-Channel Enhancement Mode MOSFET-ESD Protected

文件：339.54 Kbytes 页数：7 Pages

PANJIT

強茂

PLL-Frequency Synthesizer PMB2306R/PMB2306T Version 2.2

General Description The circuit consists of a reference-, a- and n-counter, a dual modulus control logic, a phase detector with charge pump output and a serial control logic. The setting of the operating mode and the selection of the counter ratios is done serially at the ports CLK, DA and EN. T

文件：760.48 Kbytes 页数：35 Pages

SIEMENS

西门子

GENERAL PURPOSE AMPLIFIER

Product Description The RF2306 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：59.56 Kbytes 页数：4 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2306 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：59.56 Kbytes 页数：4 Pages

RFMD

威讯联合