丝印：PHU1；Package：SOT-23；TPS793-Q1 Ultralow-Noise, High-PSRR, Fast RF 200-mA Low-Dropout Linear Regulators

1 Features 1• Qualified For Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C – Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C2 • 200-mA Low-Dropout Regulator With EN • Available in 1.8-V,

文件：905.42 Kbytes 页数：31 Pages

TI

德州仪器

丝印：PHU1；Package：SOT-23；TPS793-Q1 Ultralow-Noise, High-PSRR, Fast RF 200-mA Low-Dropout Linear Regulators

1 Features 1• Qualified For Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C – Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C2 • 200-mA Low-Dropout Regulator With EN • Available in 1.8-V,

文件：905.42 Kbytes 页数：31 Pages

TI

德州仪器

丝印：PHU1；Package：SOT-23；TPS793-Q1 Ultralow-Noise, High-PSRR, Fast RF 200-mA Low-Dropout Linear Regulators

1 Features 1• Qualified For Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C – Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C2 • 200-mA Low-Dropout Regulator With EN • Available in 1.8-V,

文件：905.42 Kbytes 页数：31 Pages

TI

德州仪器

丝印：PHU1；Package：SOT-23；TPS793-Q1 Ultralow-Noise, High-PSRR, Fast RF 200-mA Low-Dropout Linear Regulators

1 Features 1• Qualified For Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C – Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C2 • 200-mA Low-Dropout Regulator With EN • Available in 1.8-V,

文件：905.42 Kbytes 页数：31 Pages

TI

德州仪器

TrenchMOS logic level FET

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP101NQ03LT in SOT78 (TO-220AB) PHU101NQ03LT in SOT533 (I-PAK) Features ■ Low gate charge ■ Low on-state resistance. Applications ■ Optimized as

文件：279.02 Kbytes 页数：13 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：309.71 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. Features ■Logic level threshold ■Very low on-state resistance ■Lead-free construction ■Low gate charge Applications ■DC-to-DC conve

文件：108.63 Kbytes 页数：14 Pages

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·Switch-mode Power Supplies ·Power Motor Control

文件：317.8 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：308.97 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS logic level FET

文件：195.16 Kbytes 页数：13 Pages

恩XP