TrenchMOS logic level FET

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP101NQ03LT in SOT78 (TO-220AB) PHU101NQ03LT in SOT533 (I-PAK) Features ■ Low gate charge ■ Low on-state resistance. Applications ■ Optimized as

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PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：309.71 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 30-V (D-S) MOSFET

文件：994.73 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-channel TrenchMOS logic level FET

文件：195.16 Kbytes 页数：13 Pages

恩XP

N-channel TrenchMOS logic level FET

恩XP