N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance Applications:- • d.c. to d.c. converters • switched mode power s

文件：121.81 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits H

文件：782.47 Kbytes 页数：13 Pages

NEXPERIA

安世

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 90mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.16 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

·DESCRIPTION ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 110V(Min) ·Fast Switching Speed ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier

文件：304.27 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits H

文件：767.83 Kbytes 页数：13 Pages

NEXPERIA

安世

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.55 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.

文件：96.23 Kbytes 页数：9 Pages

PHI

飞利浦

Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology

Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Features ■ Logic level threshold ■ Very low on-state resistance. Applications ■ Motors, lamps, solenoids ■ Uninterruptible power supplies ■ DC-to-DC converters ■

文件：91.94 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low

文件：330.88 Kbytes 页数：14 Pages

NEXPERIA

安世

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.0mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.77 Kbytes 页数：2 Pages

ISC

无锡固电