TrenchMOS logic level FET

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP101NQ03LT in SOT78 (TO-220AB) PHU101NQ03LT in SOT533 (I-PAK) Features ■ Low gate charge ■ Low on-state resistance. Applications ■ Optimized as

文件：279.02 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Low conductio

文件：198.51 Kbytes 页数：13 Pages

恩XP

isc N-Channel MOSFET Transistor

FEATURES Drain Current -ID= 75A@ TC=25℃ Drain Source Voltage -VDSS= 30V(Min) Static Drain-Source On-Resistance -RDS(on) = 5.5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.13 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low

文件：313.33 Kbytes 页数：14 Pages

NEXPERIA

安世

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) =8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：333.22 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.82 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS standard level FET

General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Low conduc

文件：189.15 Kbytes 页数：13 Pages

恩XP

N-channel TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Standard level threshold ■ Very low on-state resistance. Applications ■ Motors, lamps, solenoids ■ Uninterruptible power supplies ■ DC-to-DC converters ■ Ge

文件：94.98 Kbytes 页数：13 Pages

PHI

飞利浦

P-channel enhancement mode MOS transistor

DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin SOT96-1 (SO8) SMD plastic package. FEATURES • Very low RDSon at low threshold • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL, etc. APPLICATIONS • Power management • DC-DC converters • Gene

文件：51.87 Kbytes 页数：8 Pages

PHI

飞利浦

P-channel enhancement mode MOS transistor

DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin SOT96-1 (SO8) SMD plastic package. FEATURES • Very low RDSon • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL, etc. APPLICATIONS • Power management • DC-DC converters • General purpose switc

文件：51.79 Kbytes 页数：8 Pages

PHI

飞利浦