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HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits High

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

N-channel TrenchMOS logic level FET

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包装：散装 类别：盒子，外壳，机架 盒配件 描述：LATCH HANDLE PADLOCKING 3PT

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

包装：散装 类别：盒子，外壳，机架 盒配件 描述：LATCH HANDLE PADLOCKING 3PT

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

PHK31NQ03LT - N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET - Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ·High efficiency due to low switching and conduction losses\n·Suitable for logic level gate drive sources;

Nexperia

安世

N-channel TrenchMOS logic level FET

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恩智浦