TrenchMOS logic level FET

Description N-channel logic level field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHB38N02LT in SOT404 (D2-PAK) PHD38N02LT in SOT428 (D-PAK). Features ■ Low on-state resistance ■ 2.5 V gate drive. Applications ■ Linear regulator for

文件：252.6 Kbytes 页数：13 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 20V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 16mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：299.78 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features 1.3 Applications n Linear regulator for Double-Data Rate (DDR) memory n Low on-state resistance n 2.5 V gate drive

文件：206.38 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel TrenchMOS logic level FET

文件：91.34 Kbytes 页数：12 Pages

恩XP

isc N-Channel MOSFET Transistor

文件：309.83 Kbytes 页数：2 Pages

ISC

无锡固电

PHD38N02LT - N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET - Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ·Low conduction losses due to low on-state resistance\n·Suitable for use with 3.3 V microprocessors due to 2.5 V gate drive;

Nexperia

安世