N-channel TrenchMOS transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP66NQ03LT in SOT78 (TO-220AB) PHB66NQ03LT in SOT404 (D2-PAK) PHD66NQ03LT in SOT428 (D-PAK) Features ■ Low on-state resistance ■ Fast switching

文件：301.04 Kbytes 页数：14 Pages

PHI

飞利浦

N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Low conductio

文件：194.98 Kbytes 页数：13 Pages

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 66A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 11mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：345.54 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low

文件：688.48 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. • Low conduction losses due to low on-state resistance\n• Suitable for logic level gate drive sources;

Nexperia

安世