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PHB18NQ10T中文资料安世数据手册PDF规格书
PHB18NQ10T规格书详情
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
DC-to-DC converters Switched-mode power supplies
产品属性
- 型号:
PHB18NQ10T
- 功能描述:
MOSFET TRENCH-100
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
恩XP |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
PHI |
24+ |
NA/ |
1300 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
恩XP |
25+ |
TO263 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
恩XP |
24+ |
TO263 |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
恩XP |
08+ |
TO-263 |
376 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
恩XP |
08+ |
TO-263 |
376 |
询价 | |||
恩XP |
24+ |
TO-263 |
504477 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
恩XP |
23+ |
NA |
6000 |
原装现货订货价格优势 |
询价 | ||
恩XP |
24+ |
N/A |
16000 |
原装正品现货支持实单 |
询价 | ||
恩XP |
25+23+ |
TO-263 |
28011 |
绝对原装正品全新进口深圳现货 |
询价 |