零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
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N-channel enhancement mode field-effect transistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Features ■TrenchMOS™technology ■Lowon-stateresistance ■Avalancheruggednessrated ■Logiclevelcompatible ■Surfacemountpackage. Applications ■DCtoDCconverters ■ | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Switching(30V,10A) Features 1)LowQg. 2)Lowon-resistance. 3)Exellentresistancetodamagefromstaticelectric Structure SiliconN-channel MOSFET | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
4VDriveNchMOSFET 4VDriveNchMOSFET Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallSurfaceMountPackage(SOP8). Application Powerswitching,DC/DCconverter. | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
Switching(30V,짹10A) Switching(30V,±10A) Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallandSurfaceMountPackage(SOP8). Applications Powerswitching,DC/DCconverter. | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
Nch30V10APowerMOSFET | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
Nch30V10APowerMOSFET | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
4VDriveNchMOSFET 4VDriveNchMOSFET Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallSurfaceMountPackage(SOP8). Application Switching | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
N-CHANNEL30V-0.0045??-80A-DPAK-IPAKPlanarSTripFET??MOSFET Description ThisMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize™”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristics,lowgatechargeandlesscriticalaligmentstepstherefore | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-channelMOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingSAMWINsemiconductor’sadvancedplanarstripe,DMOStechnologyintendedforbatteryOperatedsystemslikeaDC-DCconvertermotorcontrol,ups,audioamplifier.Also,especiallydesignedtominimizeRDS(ON) | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-channelMOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingSAMWINsemiconductor’sadvancedplanarstripe,DMOStechnologyintendedforbatteryOperatedsystemslikeaDC-DCconvertermotorcontrol,ups,audioamplifier.Also,especiallydesignedtominimizeRDS(ON) | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-channelMOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingSAMWINsemiconductor’sadvancedplanarstripe,DMOStechnologyintendedforbatteryOperatedsystemslikeaDC-DCconvertermotorcontrol,ups,audioamplifier.Also,especiallydesignedtominimizeRDS(ON) | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-channelMOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingSAMWINsemiconductor’sadvancedplanarstripe,DMOStechnologyintendedforbatteryOperatedsystemslikeaDC-DCconvertermotorcontrol,ups,audioamplifier.Also,especiallydesignedtominimizeRDS(ON) | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-channelMOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingSAMWINsemiconductor’sadvancedplanarstripe,DMOStechnologyintendedforbatteryOperatedsystemslikeaDC-DCconvertermotorcontrol,ups,audioamplifier.Also,especiallydesignedtominimizeRDS(ON) | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Features 30V,100A RDSON(typ)=2.9mΩ@VGS=10V RDSON(typ)=4.3mΩ@VGS=4.5V AdvancedTrenchTechnology ProvideExcellentRDS(ON)andLowGateCharge Leadfreeproductisacquired Application LoadSwitch PWMApplication Powermanagement 100UISTESTED! 100ΔVdsTEST | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓锋半导体深圳市拓锋半导体科技有限公司 | TUOFENG | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET ●GeneralDescription TheTF100N03MusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitching | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓锋半导体深圳市拓锋半导体科技有限公司 | TUOFENG | ||
100A,30VN-CHANNELPOWERMOSFET DESCRIPTION TheUT100N03usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=5.3mΩ@VGS=10V *RDS(ON)=8.0mΩ@VGS=4.5V | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
PHILIPS/飞利浦 |
24+ |
TO-263 |
20000 |
只做原厂渠道 可追溯货源 |
询价 | ||
PHILIPS |
17+ |
TO-263 |
6200 |
询价 | |||
PHILIPS |
07+ |
TO-263 |
20000 |
询价 | |||
NXP |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
N |
23+ |
SOT404(D |
35400 |
全新原装真实库存含13点增值税票! |
询价 | ||
PHILIPS |
2020+ |
TO-263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
NXP |
20+ |
TO-263 |
90000 |
全新原装正品/库存充足 |
询价 | ||
PHILIPS |
2020+ |
SOT404(D2PAK) |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
PHILIPS |
08+ |
TO-263 |
20000 |
普通 |
询价 | ||
PHILIPS/飞利浦 |
22+ |
SOT263 |
20000 |
保证原装正品,假一陪十 |
询价 |
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