| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Radar Pulsed Power Transistor, IlOW, loops Pulse, 10 Duty 2.25 - 2.55 GHz Features •NPNSiliconPowerTransistor •CommonBaseConfiguration •BroadbandClassCOperation •DiffusedEmitterBallastingResistors •GoldMetalizationSystem •InternalInputImpedanceMatching •HermeticMetal/CeramicPackage | MACOMTyco Electronics 玛科姆技术方案控股有限公司 | MACOM | ||
Radar Pulsed Power Transistor 50W, 2.2-2.6GHz, 100關s Pulse, 10 Duty Features •NPNsiliconmicrowavepowertransistors •Commonbaseconfiguration •BroadbandClassCoperation •Highefficiencyinter-digitizedgeometry •Diffusedemitterballastingresistors •Goldmetallizationsystem •Internalinputandoutputimpedancematching •Hermeticmetal/cerami | MA-COM M/A-COM Technology Solutions, Inc. | MA-COM | ||
Radar Pulsed Power Transistor, 50 Watts, 2.25-2.55 GHz, 100 uS Pulse, 10 Duty Features ■NPNSiliconMicrowavePowerTransistor ■CommonBaseConfiguration ■BroadbandClassCOperation ■DiffusedEmitterBallastingResistors ■GoldMetalizationSystem ■InternalInputandOutputImpedanceMatching ■HermeticMetal/CeramicPackage | MACOMTyco Electronics 玛科姆技术方案控股有限公司 | MACOM | ||
CW Power Transistor, 1W 2.3 GHz Features •NPNSiliconMicrowavePowerTransistor •CommonBaseConfiguration •ClassCOperation •InterdigitatedGeometry •DiffusedEmitterBallastingResistors •GoldMetalizationSystem •HermeticMetal/CeramicPackage | MACOMTyco Electronics 玛科姆技术方案控股有限公司 | MACOM | ||
CW Power Transistor 1W, 2.3 GHz Features •NPNsiliconmicrowavepowertransistor •Commonbaseconfiguration •ClassCoperation •Interdigitatedgeometry •Diffusedemitterballastingresistors •Goldmetalizationsystem •Hermeticmetal/Ceramicpackage | MA-COM M/A-COM Technology Solutions, Inc. | MA-COM | ||
CW Power Transistor,14W 2.3 GHz Features •NPNSiliconMicrowavePowerTransistor •CommonBaseConfiguration •ClassCOperation •InterdigitatedGeometry •GoldMetallizationSystem •HermeticMetauceramicPackage •DiffusedEmitterBallastingResistors •InternalInputandOutputImpedanceMatching | MACOMTyco Electronics 玛科姆技术方案控股有限公司 | MACOM | ||
CW Power Transistor 14W, 2.3 GHz Features •NPNsiliconmicrowavepowertransistor •Commonbaseconfiguration •ClassCoperation •Interdigitatedgeometry •Goldmetallizationsystem •Hermeticmetauceramicpackage •Diffusedemitterballastingresistors •Internalinputandoutputimpedancematching | MA-COM M/A-COM Technology Solutions, Inc. | MA-COM | ||
CW Power Transistor, 3.5W 2.3 GHz Features •NPNSiliconMicrowavePowerTransistor •CommonBaseConfiguration •ClassCOperation •InterdigitatedGeometry •DiffusedEmitterBallastingResistors •GoldMetalizationSystem •HermeticMetalCeramicPackage | MACOMTyco Electronics 玛科姆技术方案控股有限公司 | MACOM | ||
CW Power Transistor 3.5W, 2.3 GHz Features •NPNSiliconmicrowavepowertransistor •Commonbaseconfiguration •ClassCoperation •Interdigitatedgeometry •Diffusedemitterballastingresistors •Goldmetalizationsystem •Hermeticmetal/ceramicpackage | MA-COM M/A-COM Technology Solutions, Inc. | MA-COM | ||
CW Power Transistor 5W, 2.3 GHz Features •NPNsiliconmicrowavepowertransistor •Commonbaseconfiguration •ClassCoperation •Interdigitatedgeometry •Diffusedemitterballastingresistors •Goldmetalizationsystem •Hermeticmetal/ceramicpackage | MA-COM M/A-COM Technology Solutions, Inc. | MA-COM |
详细参数
- 型号：
PH2
- 功能描述：
MOSFET N-CH TRENCH 100V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
19+ |
SOT669LFPAK |
13952 |
询价 | |||
恩XP |
24+ |
标准封装 |
9548 |
全新原装正品/价格优惠/质量保障 |
询价 | ||
恩XP |
24+ |
SOT669 |
2800 |
只做原厂渠道 可追溯货源 |
询价 | ||
恩XP |
24+ |
SMD |
7700 |
新进库存/原装 |
询价 | ||
恩XP |
2016+ |
SOT669 |
1000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
恩XP |
2020+ |
SOT669 |
1500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
恩XP |
16+ |
NA |
8800 |
诚信经营 |
询价 | ||
恩XP |
1844+ |
SOT-669 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
PHI |
6000 |
面谈 |
19 |
SOT669 |
询价 | ||
恩XP |
10+PBF |
SOT669 |
2800 |
现货 |
询价 |
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