丝印：PH19；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

1 Features 1• Wide operating voltage: 1.5 V to 10 V • Nano supply current: 300 nA (Typ), 700 nA (Max) • Fixed threshold voltage (VIT-) – Threshold from 1.6 V to 4.9 V in 0.1-V steps – High accuracy: 1 (Typ), 1.5 (Max) – Built-in hysteresis (VIT+) – 1.6 V

文件：1.20703 Mbytes 页数：46 Pages

TI

德州仪器

丝印：PH19；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

1 Features 1• Wide operating voltage: 1.5 V to 10 V • Nano supply current: 300 nA (Typ), 700 nA (Max) • Fixed threshold voltage (VIT-) – Threshold from 1.6 V to 4.9 V in 0.1-V steps – High accuracy: 1 (Typ), 1.5 (Max) – Built-in hysteresis (VIT+) – 1.6 V

文件：1.33121 Mbytes 页数：44 Pages

TI

德州仪器

丝印：PH19；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

1 Features 1• Wide operating voltage: 1.5 V to 10 V • Nano supply current: 300 nA (Typ), 700 nA (Max) • Fixed threshold voltage (VIT-) – Threshold from 1.6 V to 4.9 V in 0.1-V steps – High accuracy: 1 (Typ), 1.5 (Max) – Built-in hysteresis (VIT+) – 1.6 V

文件：1.3304 Mbytes 页数：44 Pages

TI

德州仪器

丝印：PH19；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

文件：1.76236 Mbytes 页数：44 Pages

TI

德州仪器

Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz

Features • NPN Silicon Microwave Power Transistor • Common Emitter Class AB Operation • Internal Input and Output Impedance Matching • Diffused Emitter Ballasting • Gold Metallization System

文件：133.38 Kbytes 页数：2 Pages

MACOM

Wireless Bipolar Power Transistor 33W, 1930-1900 MHz

Features • NPN silicon microwave power transistor • Common emitter class AB operation • Internal input and output impedance matching • Diffused emitter ballasting • Gold metallization system • RoHS Compliant

文件：136.04 Kbytes 页数：2 Pages

MA-COM

Wireless Power Transistor 90 Watts, 1930-1990 MHz

Description MA/COMs PH1920-90 is a high power transistor designed for use in wireless communications systems. The PH1920-90 is capable of operating at an output power of 90 W CW, and is currently being used in both TDMA and CDMA applications in the 1.8 GHz to 2.0 GHz frequency range. Features •

文件：48.36 Kbytes 页数：1 Pages

MACOM

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Logic level threshold ■ Low on-state resistance ■ 175 °C rated ■ Surface-mounted package Applications ■ DC-to-DC converters ■ General pur

文件：77.38 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Low conductio

文件：166.99 Kbytes 页数：12 Pages

恩XP

WIRELESS BIPOLAR POWER TRASISTOR 45W 1930-1990 MHZ

文件：146.93 Kbytes 页数：2 Pages

MACOM