Wireless Bipolar Power Transistor

Features • NPN silicon microwave power transistor • Designed for linear amplifier applications • Class AB: -34 dBc typ. 3rd IMD at 4 W PEP • Class A: +44 dBm typ. 3rd order intercept point - • Common emitter configuration • Internal input impedance matching • Diffused emitter ballasting •

文件：192.38 Kbytes 页数：3 Pages

MA-COM

Wireless Bipolar Power Transistor, 4W 1.78 - 1.90 GHz

Features • NPN Silicon Microwave Power Transistor • Designed for Linear Amplifier Applications • Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP • Class A: +44 dBm Typ 3rd Order Intercept Point . • Common Emitter Configuration • Internal Input Impedance Matching • Diffused Emitter Ballasting

文件：224.31 Kbytes 页数：3 Pages

MACOM

Wireless Power Transistor 90 Watts, 1805-1880 MHz

Description M/A-COMs PH1819-90 is a high power transistor designed for use in wireless communications systems. The PH1819-90 is capable of operating at an output power of 90W CW, and is currently being used in both TDMA applications in th 1.8 GHz to 2.0 GHz frequency range. Features • NPN Silic

文件：108.18 Kbytes 页数：1 Pages

MACOM

Wireless Power Transistor 45 Watts, 1805 - 1880 MHz

文件：104.53 Kbytes 页数：2 Pages

MACOM

Wireless Bipolar Power Transistor 15W, 1.78-1.90 GHz

MACOM

Wireless Bipolar Power Transistor

MACOM

Wireless Bipolar Power Transistor 33W, 1805-1880 MHz

MACOM