Wireless Bipolar Power Transistor 10W, 1.78-1.90 GHz

Features • Designed for cellular base station applications • -30 dBc typ. 3rd IMD at 10 W PEP • Common emitter configuration • Internal input impedance matching • Diffused emitter ballasting

文件：202.11 Kbytes 页数：3 Pages

MA-COM

Wireless Bipolar Power Transistor, 1 OW 1.78 - 1.90 GHz

Features • Designed for Cellular Base Station Applications • -30 dBc Typ. 3rd IMD at 10 Watt PEP • Common Emitter Configuration • Internal Input Impedance Matching • Diffused Emitter Ballasting

文件：203.41 Kbytes 页数：3 Pages

MACOM

Wireless Bipolar Power Transistor, 15W . 1.78 - 1.90 GHz

Wireless Bipolar Power Transistor, 15W 1.78 - 1.90 GHz Features • NPN Silicon Microwave Power Transistor • Designed for Linear Amplifier Applications • Class AB: -34 dBc Typ 3rd IMD at 15Watts PEP • Class A:+48 dBm Typ 3rd Order lnrercept Point . • Common Emitter Configuration • Internal In

文件：229.53 Kbytes 页数：3 Pages

MACOM

Wireless Bipolar Power Transistor 15W, 1.78-1.90 GHz

Features • NPN silicon microwave power transistor • Designed for linear amplifier applications • Class AB: -34 dBc typ. 3rd IMD at 15 W PEP • Class A: +48 dBm typ. 3rd order intercept point - • Common emitter configuration • Internal input impedance matching • Diffused emitter ballasting •

文件：190.53 Kbytes 页数：3 Pages

MA-COM

Wireless Bipolar Power Transistor

Features • Designed for cellular base station applications • Class AB: -34 dBc typ. 3rd IMD at 2 W PEP • Class A: +43 dBm typ. 3rd order intercept point • Common emitter configuration • Internal input impedance matching • Diffused emitter ballasting

文件：196.3 Kbytes 页数：4 Pages

MA-COM

Wireless Bipolar Power Transistor, 2W 1.78 - 1.90 GHz

Features • Designed for Cellular Base Station Applications • Class AB: -34 dBc Typ. 3rd IMD at 2 Watts PEP • Class A: +43 dBm Typ. 3rd Order Intercept Point • Common Emitter Configuration • Internal Input Impedance Matching • Diffused Emitter Ballasting

文件：268.16 Kbytes 页数：4 Pages

MACOM

Wireless Bipolar Power Transistor 33W, 1805-1880 MHz

Features • NPN silicon microwave power transistor • Common emitter Class AB operation • Internal input and output impedance matching • Diffused emitter ballasting • Gold metallization system • RoHS Compliant

文件：180.71 Kbytes 页数：2 Pages

MA-COM

WIRELESS POWER TRANSISTOR 33W

Features • NPN Silicon Microwave Power Transistor • Common Emitter Class AI3Operation • Internal Input and Output Impedance Matching • Diffksed Emitter Ballasting • Gold Metallization System

文件：140.79 Kbytes 页数：2 Pages

MACOM

Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz

Description M/A-COM’s PH11819-45A is a high efficiency silicon bipolar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1805 to 1880 MHz range. This transistor features internal input and output impedance matching, diffused emitter ballast

文件：137.39 Kbytes 页数：2 Pages

MACOM

Wireless Bipolar Power Transistor 45W, 1805-1880 MHz

Features • NPN silicon microwave power transistor • Common emitter Class AB operation • Internal input and output impedance matching • Diffused emitter ballasting • Gold metallization system

文件：184.67 Kbytes 页数：2 Pages

MA-COM