PH1819-2

Wireless Bipolar Power Transistor, 2W 1.78 - 1.90 GHz

Features •DesignedforCellularBaseStationApplications •ClassAB:-34dBcTyp.3rdIMDat2WattsPEP •ClassA:+43dBmTyp.3rdOrderInterceptPoint •CommonEmitterConfiguration •InternalInputImpedanceMatching •DiffusedEmitterBallasting

PH1819-2

Wireless Bipolar Power Transistor

Features •Designedforcellularbasestationapplications •ClassAB:-34dBctyp.3rdIMDat2WPEP •ClassA:+43dBmtyp.3rdorderinterceptpoint •Commonemitterconfiguration •Internalinputimpedancematching •Diffusedemitterballasting

EIA1819-2P

18.7-19.7GHz,2WInternallyMatchedPowerFET

18.7-19.7GHz,2WInternallyMatchedPowerFET •18.7-19.7GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM •EIAFEATURESHIGHPAE(25TYPICAL) •EIBFEATURESHIGHIP3(46dBmTYPICAL) •+33.0/+32.5dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB •6.0/5.0dBTYPICALG1dBPOWERGAINFOREIA/EI

EIB1819-2P

18.7-19.7GHz,2WInternallyMatchedPowerFET

18.7-19.7GHz,2WInternallyMatchedPowerFET •18.7-19.7GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM •EIAFEATURESHIGHPAE(25TYPICAL) •EIBFEATURESHIGHIP3(46dBmTYPICAL) •+33.0/+32.5dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB •6.0/5.0dBTYPICALG1dBPOWERGAINFOREIA/EI