丝印：PH18；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

1 Features 1• Wide operating voltage: 1.5 V to 10 V • Nano supply current: 300 nA (Typ), 700 nA (Max) • Fixed threshold voltage (VIT-) – Threshold from 1.6 V to 4.9 V in 0.1-V steps – High accuracy: 1 (Typ), 1.5 (Max) – Built-in hysteresis (VIT+) – 1.6 V

文件：1.20703 Mbytes 页数：46 Pages

TI

德州仪器

丝印：PH18；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

1 Features 1• Wide operating voltage: 1.5 V to 10 V • Nano supply current: 300 nA (Typ), 700 nA (Max) • Fixed threshold voltage (VIT-) – Threshold from 1.6 V to 4.9 V in 0.1-V steps – High accuracy: 1 (Typ), 1.5 (Max) – Built-in hysteresis (VIT+) – 1.6 V

文件：1.33121 Mbytes 页数：44 Pages

TI

德州仪器

丝印：PH18；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

1 Features 1• Wide operating voltage: 1.5 V to 10 V • Nano supply current: 300 nA (Typ), 700 nA (Max) • Fixed threshold voltage (VIT-) – Threshold from 1.6 V to 4.9 V in 0.1-V steps – High accuracy: 1 (Typ), 1.5 (Max) – Built-in hysteresis (VIT+) – 1.6 V

文件：1.3304 Mbytes 页数：44 Pages

TI

德州仪器

丝印：PH18；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

文件：1.76236 Mbytes 页数：44 Pages

TI

德州仪器

丝印：PH18；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

文件：1.52344 Mbytes 页数：40 Pages

TI

德州仪器

Wireless Bipolar Power Transistor, 1 OW 1.78 - 1.90 GHz

Features • Designed for Cellular Base Station Applications • -30 dBc Typ. 3rd IMD at 10 Watt PEP • Common Emitter Configuration • Internal Input Impedance Matching • Diffused Emitter Ballasting

文件：203.41 Kbytes 页数：3 Pages

MACOM

Wireless Bipolar Power Transistor 10W, 1.78-1.90 GHz

Features • Designed for cellular base station applications • -30 dBc typ. 3rd IMD at 10 W PEP • Common emitter configuration • Internal input impedance matching • Diffused emitter ballasting

文件：202.11 Kbytes 页数：3 Pages

MA-COM

Wireless Bipolar Power Transistor, 15W . 1.78 - 1.90 GHz

Wireless Bipolar Power Transistor, 15W 1.78 - 1.90 GHz Features • NPN Silicon Microwave Power Transistor • Designed for Linear Amplifier Applications • Class AB: -34 dBc Typ 3rd IMD at 15Watts PEP • Class A:+48 dBm Typ 3rd Order lnrercept Point . • Common Emitter Configuration • Internal In

文件：229.53 Kbytes 页数：3 Pages

MACOM

Wireless Bipolar Power Transistor 15W, 1.78-1.90 GHz

Features • NPN silicon microwave power transistor • Designed for linear amplifier applications • Class AB: -34 dBc typ. 3rd IMD at 15 W PEP • Class A: +48 dBm typ. 3rd order intercept point - • Common emitter configuration • Internal input impedance matching • Diffused emitter ballasting •

文件：190.53 Kbytes 页数：3 Pages

MA-COM

Wireless Bipolar Power Transistor, 2W 1.78 - 1.90 GHz

Features • Designed for Cellular Base Station Applications • Class AB: -34 dBc Typ. 3rd IMD at 2 Watts PEP • Class A: +43 dBm Typ. 3rd Order Intercept Point • Common Emitter Configuration • Internal Input Impedance Matching • Diffused Emitter Ballasting

文件：268.16 Kbytes 页数：4 Pages

MACOM