Radar Pulsed Power Transistor - 25 Watts, 1.20-1.40 GHz, 150mS Pulse, 10 Duty

Description M/A-COM’s PH1214-25M is a silicon bipolar NPN power transistor designed for use in L-band, 1.2 - 1.4 GHz pulsed radars such as air traffic control and long-range weather radars. Designed for common-base, class C, broadband pulsed power applications, the PH1214-25M can produce 25 watts

文件：48.46 Kbytes 页数：2 Pages

MACOM

Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：138.79 Kbytes 页数：3 Pages

MA-COM

Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：132.07 Kbytes 页数：2 Pages

MA-COM

Radar Pulsed Power Transistor, 25W, 1us Pulse, 10 Duty 1.2 - 1.4 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input Impedance Matching • Hermetic Metal/Ceramic Package

文件：145.03 Kbytes 页数：2 Pages

MACOM

Radar Pulsed Power Transistor, 2W, loops Pulse, 10 Duty 1.2 - 1.4 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input Impedance Matching • Hermetii: Metal/Ceramic Package

文件：140.89 Kbytes 页数：2 Pages

MACOM

Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：143.04 Kbytes 页数：3 Pages

MA-COM

Radar Pulsed Power Transistor, 300 Watts,1.20-1.40 GHz, 150 mS Pulse, 10 Duty

Features ■ NPN Silicon Microwave Power Transistor ■ Common Base Configuration ■ Broadband Class C Operation ■ High Efficiency Interdigitated Geometry ■ Gold Metalization System ■ Internal Input and Output Impedance Matching ■ Hermetic Metal/Ceramic Package

文件：248.43 Kbytes 页数：4 Pages

MACOM

Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：157.71 Kbytes 页数：4 Pages

MA-COM

Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：141.61 Kbytes 页数：2 Pages

MA-COM

Radar Pulsed Power Transistor, 30W, 1.0ms Pulse, 10 Duty 1.2 - 1.4 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • Matrix Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input Impedance Matching • Hermetic Metal/Ceramic Package

文件：132.08 Kbytes 页数：2 Pages

MACOM