Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：132.07 Kbytes 页数：2 Pages

MA-COM

Radar Pulsed Power Transistor, 25W, 1us Pulse, 10 Duty 1.2 - 1.4 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input Impedance Matching • Hermetic Metal/Ceramic Package

文件：145.03 Kbytes 页数：2 Pages

MACOM

Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：132.04 Kbytes 页数：2 Pages

MA-COM

Radar Pulsed Power Transistor, 25W, 300us Pulse, 10 Duty 1.2 - 1.4 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input Impedance Matching • Hermetic Metal/Ceramic Package

文件：147.72 Kbytes 页数：2 Pages

MACOM

Radar Pulsed Power Transistor 25W, 1.2-1.4 GHz, 300關s Pulse, 10 Duty

文件：132.04 Kbytes 页数：2 Pages

MACOM