Avionics Pulsed Power Transisor 15W, 1030 - 1090MHz

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：150.77 Kbytes 页数：4 Pages

MA-COM

AVIONICS PULSED POWER TRANSISTOR

FEATURES • Designed for Pulsed Avionics Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic

文件：91.09 Kbytes 页数：1 Pages

MACOM

Avionics Pulsed Power Transistor - 175 Watts, 1030-1090 MHz, 250ms Pulse,

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：41.9 Kbytes 页数：2 Pages

MACOM

Avionics Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：144.36 Kbytes 页数：4 Pages

MA-COM

Avionics Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：153.15 Kbytes 页数：4 Pages

MA-COM

Avionics Pulsed Power Transistor - 350 Watts,1030-1090 MHz, 250us Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：62.78 Kbytes 页数：2 Pages

MACOM

Avionics Pulsed Power Transistor - 550 Watts,1030-1090 MHz, 10us Pulse, 1 Duty

Description M/A-COM’s PH1090-550S is a silicon bipolar NPN transistor intended for use in L-band, 1.2 - 1.4 GHz avionics equipment such as IFF, mode-S and TCAS systems. Designed for common-base, class C broadband pulsed power applications, the PH1090-550S delivers 7.5 dB of gain at 550 watts of o

文件：64.26 Kbytes 页数：2 Pages

MACOM

Avionics Pulsed Power Transisitor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：148.38 Kbytes 页数：3 Pages

MA-COM

Avionics Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：199.06 Kbytes 页数：4 Pages

MA-COM

Avionics Pulsed Power Transistor, 700 Watts,1.03-1.09 GHz, 32 mS Pulse, 2 Duty

Features ■ Designed for Mode-S IFF Applications ■ NPN Silicon Microwave Power Transistor ■ Common Base Configuration ■ Broadband Class C Operation ■ High Efficiency Interdigitated Geometry ■ Gold Metalization System ■ Internal Input and Output Impedance Matching ■ Hermetic Metal/Ceramic Pa

文件：263.2 Kbytes 页数：4 Pages

MACOM