Avionics Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

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Avionics Pulsed Power Transistor, 700 Watts,1.03-1.09 GHz, 32 mS Pulse, 2 Duty

Features ■ Designed for Mode-S IFF Applications ■ NPN Silicon Microwave Power Transistor ■ Common Base Configuration ■ Broadband Class C Operation ■ High Efficiency Interdigitated Geometry ■ Gold Metalization System ■ Internal Input and Output Impedance Matching ■ Hermetic Metal/Ceramic Pa

文件：263.2 Kbytes 页数：4 Pages

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Avionics Pulsed Power Transistor 700W, 1030-1090 MHz, 32關s Pulse, 2 Duty

文件：199.06 Kbytes 页数：4 Pages

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Avionics Pulsed Power Transistor

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Bipolar

·NPN Silicon Microwave Power Transistors\n·RoHS Compliant\n·Hermetic Metal/Ceramic Package\n·Internal Input and Output Impedance Matching\n·Gold Metallization System\n·Diffused Emitter Ballasting Resistors\n·High Efficiency Inter-Digitized Geometry\n·Common Base Configuration\n·Broadband Class C Ope;

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