MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone

MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone Features • 1 in / 2 out dual band amplifier • Simple external circuit including output matching circuit • Simple band switching and power control • High gain 3stage amplifier : +4.5 dBm input •

文件：42.39 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone

MOS FET Power Amplifier Module\nfor E-GSM900 and DCS1800 Dual Band Handy Phone •  1 in / 2 out dual band amplifier\n•  Simple external circuit including output matching circuit\n•  Simple band switching and power control\n•  High gain 3stage amplifier : +4.5 dBm input\n•  Lead less thin & Small package : 11 ×13.75 ×1.8 mm\n•  High efficiency : 48% Typ at 34.5 dBm for E-GSM;

HITACHI

日立

MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone

MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone Features • 1 in / 2 out dual band amplifier • Simple external circuit including output matching circuit • Simple band switching and power control • High gain 3stage amplifier : +1 dBm input for GS

文件：34.5 Kbytes 页数：7 Pages

HitachiHitachi Semiconductor

日立日立公司

NTC Power Thermistors Inrush Current Limiters

文件：144.85 Kbytes 页数：5 Pages

MERITEK

NTC Power Thermistors Inrush Current Limiters

文件：144.85 Kbytes 页数：5 Pages

MERITEK