PF08103A中文资料日立数据手册PDF规格书

MOS FET Power Amplifier Module

for E-GSM900 and DCS1800 Dual Band Handy Phone

特性 Features

• 1 in / 2 out dual band amplifier

• Simple external circuit including output matching circuit

• Simple band switching and power control

• High gain 3stage amplifier : +4.5 dBm input

• Lead less thin & Small package : 11 ×13.75 ×1.8 mm

• High efficiency : 48 Typ at 34.5 dBm for E-GSM

36 Typ at 31.5 dBm for DCS1800

Application

• Dual band amplifier for E-GSM900 (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz).

• For 4.8 V nominal battery use