PF08103A数据手册HITACHI中文资料规格书

描述 Description

MOS FET Power Amplifier Module
for E-GSM900 and DCS1800 Dual Band Handy Phone

特性 Features

•  1 in / 2 out dual band amplifier
•  Simple external circuit including output matching circuit
•  Simple band switching and power control
•  High gain 3stage amplifier : +4.5 dBm input
•  Lead less thin & Small package : 11 ×13.75 ×1.8 mm
•  High efficiency : 48% Typ at 34.5 dBm for E-GSM
                         36% Typ at 31.5 dBm for DCS1800Application
•  Dual band amplifier for E-GSM900 (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz).
•  For 4.8 V nominal battery use