首页 >PESD5V0S2UQESD静电二极管>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
ProtectionagainsthighsurgecurrentsinultrasmallDFN1010D-3package | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Lowcapacitancebi-directionaldoubleESDprotectiondiodeinSOT23package Generaldescription Lowcapacitancebi-directionaldoubleESDprotectiondiodeinthesmallSOT23plasticpackagedesignedtoprotect2datalinesfromthedamagecausedbyElectroStaticDischarge(ESD)andothertransients. Features ■Bi-directionalESDprotectionof2lines ■Low | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
LowcapacitancebidirectionaldoubleESDprotectiondiode 1.Generaldescription LowcapacitancebidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodeinasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackagedesignedtoprotecttwodata linesfromthedamagecausedbyESDandothertransients. 2.Featuresandbenefits • | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
300Wpeakpulsepower(tp=8/20μs) Features 300Wpeakpulsepower(tp=8/20μs) Bidirectionalandunidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent Lowcapacitance(Cj=120pFtyp.) Protectiontwodatalines IEC61000-4-2±30kVcontact±30kVair IEC61000-4-4(EF | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
LowcapacitancebidirectionaldoubleESDprotectiondiode 1.Generaldescription LowcapacitancebidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodeinasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage,designedtoprotecttwodata linesfromthedamagecausedbyESDandothertransients. 2.Featuresandbenefits | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
LowVCEsat(BISS)transistors | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
DoubleESDprotectiondiodesinSOT23package DESCRIPTION UnidirectionaldoubleESDprotectiondiodesincommoncathodeconfigurationintheSOT23plasticpackage.DesignedtoprotectuptotwotransmissionordatalinesagainstdamagefromElectroStaticDischarge(ESD)andothertransients. FEATURES •UnidirectionalESDprotectionofupt | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
DoubleESDprotectiondiodesinSOT23package FEATURES ·UnidirectionalESDprotectionofuptotwolines ·Common-cathodeconfiguration ·Max.peakpulsepower:Ppp=330Wattp=8/20ms ·Lowclampingvoltage:V(CL)R=20VatIpp=18A ·Ultra-lowreverseleakagecurrent:IRM30kV ·IEC61000-4-2;lev | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
DoubleESDprotectiondiodeinSOT23package 1.Generaldescription UnidirectionaldoubleESDprotectiondiodeincommoncathodeconfigurationinasmallSOT23 Surface-MountedDevice(SMD)plasticpackage,designedtoprotectuptotwodatalinesagainst damagefromElectroStaticDischarge(ESD)andothertransients. 2.Featuresandbene | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
DoubleESDprotectiondiodeinSOT23package 1.Generaldescription UnidirectionaldoubleESDprotectiondiodeincommoncathodeconfigurationinasmallSOT23 Surface-MountedDevice(SMD)plasticpackage,designedtoprotectuptotwodatalinesagainst damagefromElectroStaticDischarge(ESD)andothertransients. 2.Featuresandbe | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
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