PESD5V0S2BT-Q中文资料安世数据手册PDF规格书

厂商型号	PESD5V0S2BT-Q
功能描述	Low capacitance bidirectional double ESD protection diode
丝印标识	G5
封装外壳	SOT23
文件大小	228.61 Kbytes
页面数量	12 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-25 20:00:00
人工找货	PESD5V0S2BT-Q价格和库存，欢迎联系客服免费人工找货

1. General description

Low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode in a small

SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, designed to protect two data

lines from the damage caused by ESD and other transients.

2. Features and benefits

• Bidirectional ESD protection of two lines

• Low diode capacitance

• Max. peak pulse power: PPPM = 130 W at tp = 8/20 μs

• Low clamping voltage: VCL = 14 V at IPPM = 12 A

• Ultra low leakage current: IRM = 5 nA at VRWM = 5 V

• ESD protection up to 30 kV

• IEC 61000-4-2; level 4 (ESD)

• IEC 61000-4-5 (surge); IPPM = 12 A at tp = 8/20 μs

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• Cellular handsets and accessories

• Portable electronics

• Computers and peripherals

• Communication systems

• Audio and video equipment