PEMB10

PNP resistor-equipped double transistor R1 = 2.2 kohm, R2 = 47 kohm

DESCRIPTION PNP/PNPresistor-equippedtransistors(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Lowcurrent

PEMB10

Marking：Z5；Package：SOT666；PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

1.1Generaldescription PNP/PNPResistor-EquippedTransistors(RET)inSurface-MountedDevice(SMD)plastic packages. 1.2Featuresandbenefits 1.3Applications Lowcurrentperipheraldriver ControlofICinputs Replacesgeneral-purposetransistorsindigitalapplications Table1.Pr

PEMB10

Marking：Z5；Package：SOT666；PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts AEC-Q101qualified

PEMB10_V01

PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts AEC-Q101qualified

PEMB10_PUMB10_15

PNP/PNP resistor-equipped transistors; PNP/PNP resistor-equipped transistors;