NPN resistor-equipped transistors; R1 = 47 KOHM, R2 = 22 KOHM

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：93.76 Kbytes 页数：14 Pages

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NPN resistor-equipped transistors; R1 = 47 k-ohm, R2 = 22 k-ohm

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：92.32 Kbytes 页数：14 Pages

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PHI

PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：420.75 Kbytes 页数：15 Pages

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安世

丝印：DD；Package：SOT883；NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：422.13 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：DD；Package：SOT883；NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver. DESCRIPTION NPN resistor-equipped transistor (see “Simplif

文件：422.12 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：DD；Package：DFN1006-3；50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface- Mounted Device (SMD) plastic package. PNP complement: PDTA144WM 2. Features and benefits • Built-in bias resistors • Simplifies circuit design • Reduces component count • Red

文件：187.82 Kbytes 页数：7 Pages

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安世

NPN resistor-equipped transistors; R1 = 47 k廓, R2 = 22 k廓

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：189.8 Kbytes 页数：14 Pages

恩XP

NPN resistor-equipped transistors R1 = 47 k廓, R2 = 22 k廓

文件：189.8 Kbytes 页数：14 Pages

PHI

PHI

丝印：00111111；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 47 k廓, R2 = 22 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144WMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：831.88 Kbytes 页数：12 Pages

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安世

NPN resistor-equipped transistor; R1 = 47 k廓, R2 = 22 k廓

文件：696.71 Kbytes 页数：11 Pages

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