丝印：DM；Package：SOT-883；NPN resistor-equipped transistors; R1 = 4.7 kOHM, R2 = open

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

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丝印：DM；Package：SOT-883；NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = open

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：180.93 Kbytes 页数：14 Pages

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丝印：DM；Package：SOT883；NPN resistor-equipped transistors R1 = 4.7 kΩ, R2 = open

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit applications. DESCRIPTION NPN resistor-equipped transistor (see “S

文件：402.59 Kbytes 页数：15 Pages

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丝印：DM；Package：SOT883；NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit applications.

文件：402.61 Kbytes 页数：15 Pages

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PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：385.86 Kbytes 页数：15 Pages

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丝印：00111011；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = open

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143TMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：722.65 Kbytes 页数：12 Pages

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NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = open

文件：587.94 Kbytes 页数：11 Pages

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NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open

NPN resistor-equipped transistor (see �Simplified outline, symbol and pinning� for package details). • Built-in bias resistors\n• Simplified circuit design\n• Reduction of component count\n• Reduced pick and place costs.\n• AEC-Q101 qualified;

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NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143TMB. • 100 mA output current capability\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm;

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