NPN resistor-equipped transistor

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and ampli

文件：66.26 Kbytes 页数：8 Pages

PHI

飞利浦

NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and ampli

文件：92.63 Kbytes 页数：14 Pages

PHI

飞利浦

NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：181.16 Kbytes 页数：14 Pages

恩XP

丝印：25；Package：SOT23；50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123JT 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces co

文件：809.84 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

文件：1.05544 Mbytes 页数：18 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：25；Package：SOT23；50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123JT 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces co

文件：228.88 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ

NPN Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD) plastic packages. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• AEC-Q101 qualified;

Nexperia

安世

50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PDTA123JT • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V TO236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司