NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and ampli

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PHI

飞利浦

NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：181.16 Kbytes 页数：14 Pages

恩XP

丝印：DW；Package：DFN1006-3；50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface- Mounted Device (SMD) plastic package. PNP complement: PDTA123JM 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit desig

文件：818.02 Kbytes 页数：12 Pages

NEXPERIA

安世

PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

文件：1.05544 Mbytes 页数：18 Pages

NEXPERIA

安世

丝印：00010111；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = 47 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123JMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：840.61 Kbytes 页数：12 Pages

NEXPERIA

安世

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ

NPN Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD) plastic packages. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• AEC-Q101 qualified;

Nexperia

安世

NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123JMB. • 100 mA output current capability\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm;

Nexperia

安世

Package：SC-101，SOT-883；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V DFN1006-3

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安世

Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 250MW 3DFN

NEXPERIA

安世