丝印：-16；Package：SOT-23；NPN resistor-equipped transistor

DESCRIPTION NPN resistor-equipped transistor FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver.

文件：50.75 Kbytes 页数：8 Pages

PHI

飞利浦

丝印：-16；Package：SOT-23；NPN resistor-equipped transistor; R1 = 10 kohm, R2 = 10 kohm

DESCRIPTION NPN resistor-equipped transistor FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver.

文件：92.9 Kbytes 页数：14 Pages

PHI

飞利浦

丝印：-16；Package：SOT-23；NPN resistor-equipped transistor; R1 = 10 k廓, R2 = 10 k廓

DESCRIPTION NPN Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD) plastic packages. FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and ampli

文件：181.28 Kbytes 页数：14 Pages

恩XP

丝印：16；Package：SOT23；50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114ET 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces component cou

文件：240.84 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：16；Package：SOT23；NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：1.3323 Mbytes 页数：17 Pages

NEXPERIA

安世

Digital Transistor(NPN)

Features « Built bias resistors « making device design easy « almost completely eliminating parasitic effects

文件：1.94836 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：-16；Package：SOT-23；NPN resistor-equipped transistors; R1 = 10 k?? R2 = 10 k?

文件：717.9 Kbytes 页数：17 Pages

恩XP

丝印：-16；Package：SOT-23；Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：-16；Package：SOT-23；NPN resistor-equipped transistors

文件：717.9 Kbytes 页数：17 Pages

PHI

飞利浦

丝印：16；Package：SOT23；50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114ET-Q 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces component c

文件：242.52 Kbytes 页数：13 Pages

NEXPERIA

安世