PNP resistor-equipped transistors; R1 = 1 kW, R2 = 10 kW

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：236.59 Kbytes 页数：19 Pages

NEXPERIA

安世

N-channel junction FETs

DESCRIPTION Symmetrical N-channel junction FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers and thin and thick film hybrids. FEATURES • High-speed switching • Interchangeability of drain and source connections

文件：36.52 Kbytes 页数：6 Pages

PHI

PHI

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

文件：55.13 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS

Description The single TSH110 and TSH111, the dual TSH112, the triple TSH113 and the quad TSH114 are current feedback operational amplifiers featuring a very high slew rate of 450V/µs and a large bandwidth of 100MHz, with only a 3.2mA quiescent supply current. The TSH111 and TSH113 feature a Stan

文件：424.63 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体