PDTB143ET

Marking：4X；Package：TO-236AB；500 mA, 50 V PNP resistor-equipped transistors

Generaldescription PNPResistor-EquippedTransistor(RET)familyinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage. Features ■500mAoutputcurrentcapability ■±10resistorratiotolerance ■Built-inbiasresistors ■AEC-Q101qualified ■Simplifiescircuitdesign

PDTB143ET

Marking：4X；Package：SOT23；500 mA, 50 V PNP resistor-equipped transistors

Features 500mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount 10resistorratiotolerance AEC-Q101qualified Hightemperatureapplications upto175°C

PDTB143ET

500 mA, 50 V PNP resistor-equipped transistors; • 500 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• ± 10 % resistor ratio tolerance\n• AEC-Q101 qualified\n• High temperature applications up to 175 °C\n;

PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n

PDTB143ET-Q

50 V, 500 mA PNP resistor-equipped transistor;

PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package.\n NPN complement: PDTD143ET-Q\n

PDTB143ET-Q

Marking：4X；Package：SOT23；50 V, 500 mA PNP resistor-equipped transistor

1.Generaldescription PNPResistor-EquippedTransistor(RET)inasmallSOT23Surface-MountedDevice(SMD)plastic package. NPNcomplement:PDTD143ET-Q 2.Featuresandbenefits •500mAoutputcurrentcapability •Built-inbiasresistors •Simplifiescircuitdesign •Reducescomponentc

PDTB143ETR

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 0.46W

Nexperia USA Inc.

PDTB143ETVL

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V TO236AB

Nexperia USA Inc.