AZ4018-01G

Marking：4X；Package：SOD-123；Transient Voltage Suppressing Device For ESD/Surge/Transient Protection

Features
ESD/SurgeProtectionfor1Linewith Unidirectional.
ProvideESDprotectionforeachlineto IEC61000-4-2(ESD)±30kV(air/contact) IEC61000-4-4(EFT)80A(5/50ns) IEC61000-4-5(Lightning)34A(8/20μs)
Suitablefor,18Vandbelow,operatingvoltage applications
Small

AZ4512-01F.R7G

Marking：4X；Package：DFN1610P2E；Transient Voltage Suppressing Device For ESD and Surge Protection

Features
ESD/SurgeProtectionfor1Linewith Unidirectional.
ProvideESDprotectionforeachlineto IEC61000-4-2(ESD)±30kV(air/contact) IEC61000-4-4(EFT)80A(5/50ns) IEC61000-4-5(Lightning)38A(8/20μs)
Foroperatingvoltageof12Vandbelow
1.6mmx1.0mmDFNpackages

AZ4512-01L

Marking：4X；Package：SOD-323；Transient Voltage Suppressing Device For ESD and Surge Protection

Features
ESDProtectfor1LinewithUnidirectional.
ProvideESDprotectionforalineto IEC61000-4-2(ESD)±30kV(air/contact) IEC61000-4-4(EFT)80A(5/50ns) IEC61000-4-5(Lightning)38A(8/20μs)
Suitablefor,12Vandbelow,operatingvoltage applications
Ultrasmallpackage

BZX384-A56

Marking：4X；Package：SOD323；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

BZX384-A56

Marking：4X；Package：SOD323；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A)tolerancerange.Theseries includes37breakdownvoltageswithnominalworkingvoltagesfrom2.4Vto

BZX384-A56-Q

Marking：4X；Package：SC-76；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

MM1Z6V8

Marking：4X；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.500mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

PDTB143ET

Marking：4X；Package：TO-236AB；500 mA, 50 V PNP resistor-equipped transistors

Generaldescription PNPResistor-EquippedTransistor(RET)familyinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage. Features ■500mAoutputcurrentcapability ■±10resistorratiotolerance ■Built-inbiasresistors ■AEC-Q101qualified ■Simplifiescircuitdesign

PDTB143ET

Marking：4X；Package：SOT23；500 mA, 50 V PNP resistor-equipped transistors

Features 500mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount 10resistorratiotolerance AEC-Q101qualified Hightemperatureapplications upto175°C

PDTB143ET-Q

Marking：4X；Package：SOT23；50 V, 500 mA PNP resistor-equipped transistor

1.Generaldescription PNPResistor-EquippedTransistor(RET)inasmallSOT23Surface-MountedDevice(SMD)plastic package. NPNcomplement:PDTD143ET-Q 2.Featuresandbenefits •500mAoutputcurrentcapability •Built-inbiasresistors •Simplifiescircuitdesign •Reducescomponentc