PDTB123TK

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts

PDTB123TS

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts

PDTB123TT

丝印：1U；Package：SOT23；PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open

Featuresandbenefits *500mAoutputcurrentcapability *Built-inbiasresistor *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

PDTB123TT

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts

PDTB123TT

PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = open; • 500 mA output current capability\n• Reduces component count\n• Built-in bias resistor\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified\n;

500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PDTD123TT.\n

PDTB123TT,215

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 250MW TO236AB

Nexperia USA Inc.