PDTA124XK

PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 47 kohm

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

PDTA124XK

Package：SC-59A；PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

Features *Built-inbiasresistors *Simplifiescircuitdesign *100mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts

PDTA124XK

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ; • Built-in bias resistors\n• Simplified circuit design\n• Reduction of component count\n• Reduced pick and place costs.;

DESCRIPTION\nPNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details).FEATURES\n• Built-in bias resistors\n• Simplified circuit design\n• Reduction of component count\n• Reduced pick and place costs.APPLICATIONS\n• General purpose switching and amplification\n• Inverter and interface circuits\n• Circuit driver.

PDTA124XM

PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 47 kohm

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

PDTA124XM

Package：SC-101；PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

Features *Built-inbiasresistors *Simplifiescircuitdesign *100mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts

PDTA124XMB

Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 22 k廓, R2 = 47 k廓

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC124XMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

PDTA124XQB

50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.5mm •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint

PDTA124XQB

Package：DFN1110D-3；50 V, 100 mA PNP resistor-equipped transistors

Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.5mm •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint

PDTA124XQB-Q

50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.5mm •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •QualifiedaccordingtoAEC-Q

PDTA124XQB-Q

Package：DFN1110D-3；50 V, 100 mA PNP resistor-equipped transistors

1.Generaldescription 100mAPNPResistor-EquippedTransistor(RET)familyinanultrasmallDFN1110D-3(SOT8015) leadlessSurface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEDEC NPNcomplement: PDTA14