NPN resistor-equipped transistors; R1 = 2.2 kW, R2 = open

Features * Built-in bias resistors * Simplifies circuit design * 100 mA output current capability * Reduces component count * Reduces pick and place costs

文件：585.57 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：00100011；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = open

文件：729.91 Kbytes 页数：12 Pages

NEXPERIA

安世

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = open

恩XP

PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open

PNP Resistor-Equipped Transistors (RET) family. • Built-in bias resistors\n• Reduces component count\n• Simplifies circuit design\n• Reduces pick and place costs\n• 100 mA output current capability\n• AEC-Q101 qualified;

Nexperia

安世

PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open

PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123TMB. • 100 mA output current capability\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm;

Nexperia

安世

Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V DFN1006B-3

Nexperia USA Inc.

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V TO236AB

Nexperia USA Inc.

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V TO236AB

Nexperia USA Inc.