PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ

PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PDTC113EMB. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm;

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丝印：00011100；Package：SOT883B；PNP resistor-equipped transistor; R1 = 1 k廓, R2 = 1 k廓

文件：755.37 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V DFN1006B-3

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNP resistor-equipped transistors; R1 = 1 kW, R2 = 1 kW

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：235.87 Kbytes 页数：19 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司