PDK2314技术资料参数供应价格博盛半导体PDT-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
PDK2314	文件：300 bytes Page：1 Pages	Middle & Low Voltage MOSFET	PDT	PDT
PDK2314	文件：300 bytes Page：1 Pages	MOSFETs	Potens 博盛半导体	Potens
PDN2314S	文件：1.27649 Mbytes Page：5 Pages	20V N-Channel MOSFETs Features - 20V, 5.8A, RDS(ON) =25mΩ@VGS = 4.5V - Improved dv/dt capability - Fast switching - Green Device Available - Suit for 1.8V Gate Drive Applications - Notebook - Hend-Held Instruments Applications - Load Switch 文件：1.27649 Mbytes 页数：5 Pages	POTENS 博盛半导体	POTENS
PMB2314	文件：475.4 Kbytes Page：14 Pages	Prescaler Circuit 2.1 GHz Functional Description/ Application The IC is designed for use in mobile radio communication devices up to 2100 MHz and upconversion systems up 2500 MHz. Due to low power consumption and low phase noise generation, the PMB2314T is suitable for use in battery powered handheld systems, e.g. GSM, c 文件：475.4 Kbytes 页数：14 Pages	INFINEON 英飞凌	INFINEON
PMB2314T	文件：475.4 Kbytes Page：14 Pages	Prescaler Circuit 2.1 GHz Functional Description/ Application The IC is designed for use in mobile radio communication devices up to 2100 MHz and upconversion systems up 2500 MHz. Due to low power consumption and low phase noise generation, the PMB2314T is suitable for use in battery powered handheld systems, e.g. GSM, c 文件：475.4 Kbytes 页数：14 Pages	INFINEON 英飞凌	INFINEON

更多PDK2314供应商更新时间2026-4-17 15:08:00