PD55003-E中文资料3W 12.5V 500MHz LDMOS，PowerSO-10RF塑料封装数据手册ST规格书

描述 Description

The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55003 boasts excellent gain, linearity and reliability thanks to ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF.

The PD55003’s superior linearity performance makes it an ideal solution for car mobile radios.

The PowerSO-10RF plastic package is designed for high reliability, and is the first JEDEC-approved, high power SMD package from ST. It has been optimized for RF requirements and offers excellent RF performance and ease of assembly.

Mounting recommendations are provided in application note AN1294, available on www.st.com.

特性 Features

• Excellent thermal stability
• Common source configuration
• POUT= 3 W with 17dB gain @ 500 MHz / 12.5 V

简介

PD55003-E属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的PD55003-E晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。