PD54008L-E数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The PD54008L-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54008L-E boasts the excellent gain, linearity and reliability of STH1LV latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™.

PD54008L-E’s superior linearity performance makes it an ideal solution for portable radio.

特性 Features

• In compliance with the 2002/93/EC european directive
• Supplied in tape & reel of 3K units
• Excellent thermal stability
• Broadband performances POUT = 8W with 15 dB gain @ 500MHz
• Common source configuration
• EDS protection
• New leadless plastic package

简介

PD54008L-E属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的PD54008L-E晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。